简介：

AZ 50XT是一种超厚膜，高分辨率，高纵宽比I线正型光刻胶，适用于微电镀工艺。

特征：

1)  Positive resist for developing plating and wafer bumping applications

2)  50 to 80 micron single coat capability. 120+micron double coat capability

3)  3 to 1 aspect ratio. Excellent sidewall profiles. Wide process latitude

4)  Inorganic developer recommended

5)  Compatible with existing thick film processes

    参考工艺条件：

1）AZ® 50XT,~65um FT

2）85°C / 2-min pre-bake w/0.5mm proximity

3）110°C / 10-minute soft-bake w/0.1mm proximity

4）Exposure on Ultratech® Titan-300,-35µm Focus,Mask: 100um vias 1:1

5）Develop in AZ® 421K Developer,9-minute immersion / automated wet bench

匀胶曲线：

成像参考：